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High temperature gate control of quantum well spin memory

O. Z. Karimov·G. H. John·R. T. Harley·W. H. Lau·M. E. Flatte·M. Henini·R. Airey
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Abstract

Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field-independent below 20 kV cm-1 reflecting quantum well interface asymmetry. The results indicate the achievability of voltage-gateable spin-memory time longer than 3 ns simultaneously with high electron mobility.

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O. Z. Karimov, G. H. John, R. T. Harley, W. H. Lau, M. E. Flatte, M. Henini, R. Airey. 2003-05-16. High temperature gate control of quantum well spin memory. https://doi.org/10.1103/physrevlett.91.246601

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