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M. Henini

Publications and source records attributed to M. Henini.

At least 19 recordsLinked to original sources

Fine structure of phonon replicas in a tunnel spectrum of a GaAs quantum well

A fine structure of phonon replicas in the current-voltage characteristic of a resonant-tunneling diode has been investigated experimentally. A detailed study of the diode I-V curves in magnetic fields of different orientations has allowed to determine the origin of the features in the fine structure. The voltage positions of the features are shown to coincide with calculated that in the frame of two models: LO-phonon assisted tunneling and resonant tunneling of polarons.

cond-mat.mes-hall

Dispersive line shape in the vicinity of the ν = 1 quantum Hall state: Coexistence of Knight shifted and unshifted resistively detected NMR responses

The frequency splitting between the dip and the peak of the resistively detected nuclear magnetic resonance (RDNMR) dispersive line shape (DLS) has been measured in the quantum Hall effect regime as a function of filling factor, carrier density and nuclear isotope. The splitting increases as the filling factor tends to ν = 1 and is proportional to the hyperfine coupling, similar to the usual Knight shift versus ν-dependence. The peak frequency shifts linearly with magnetic field throughout the studied filling factor range and matches the unshifted substrate signal, detected by classical NMR. Thus, the evolution of the splitting is entirely due to the changing Knight shift of the dip feature. The nuclear spin relaxation time, T1, is extremely long (hours) at precisely the peak frequency. These results are consistent with the local formation of a ν = 2 phase due to the existence of spin singlet D$^-$ complexes.

cond-mat.mes-hall

Classical percolation fingerprints in the high-temperature regime of the integer quantum Hall effect

We have performed magnetotransport experiments in the high-temperature regime (up to 50 K) of the integer quantum Hall effect for two-dimensional electron gases in semiconducting heterostructures. While the magnetic field dependence of the classical Hall law presents no anomaly at high temperatures, we find a breakdown of the Drude-Lorentz law for the longitudinal conductance beyond a crossover magnetic field B_c ~ 1 T, which turns out to be correlated with the onset of the integer quantum Hall effect at low temperatures. We show that the high magnetic field regime at B > B_c can be understood in terms of classical percolative transport in a smooth disordered potential. From the temperature dependence of the peak longitudinal conductance, we extract scaling exponents which are in good agreement with the theoretically expected values. We also prove that inelastic scattering on phonons is responsible for dissipation in a wide temperature range going from 1 to 50 K at high magnetic fields.

cond-mat.mes-hall

Real-space imaging of quantum Hall effect edge strips

We use dynamic scanning capacitance microscopy (DSCM) to image compressible and incompressible strips at the edge of a Hall bar in a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. This method gives access to the complex local conductance, Gts, between a sharp metallic tip scanned across the sample surface and ground, comprising the complex sample conductance. Near integer filling factors we observe a bright stripe along the sample edge in the imaginary part of Gts. The simultaneously recorded real part exhibits a sharp peak at the boundary between the sample interior and the stripe observed in the imaginary part. The features are periodic in the inverse magnetic field and consistent with compressible and incompressible strips forming at the sample edge. For currents larger than the critical current of the QHE break-down the stripes vanish sharply and a homogeneous signal is recovered, similar to zero magnetic field. Our experiments directly illustrate the formation and a variety of properties of the conceptually important QHE edge states at the physical edge of a 2DEG.

cond-mat.mes-hall

Spin-orbit fields in asymmetric (001) quantum wells

We measure simultaneously the in-plane electron g-factor and spin relaxation rate in a series of undoped inversion-asymmetric (001)-oriented GaAs/AlGaAs quantum wells by spin-quantum beat spectroscopy. In combination the two quantities reveal the absolute values of both the Rashba and the Dresselhaus coefficients and prove that the Rashba coefficient can be negligibly small despite huge conduction band potential gradients which break the inversion symmetry. The negligible Rashba coefficient is a consequence of the 'isomorphism' of conduction and valence band potentials in quantum systems where the asymmetry is solely produced by alloy variations.

cond-mat.mes-hall

Optical imaging of resonant electrical carrier injection into individual quantum dots

We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to sharp EL lines characteristic of individual QDs, accompanied by a spatial fragmentation of the surface EL emission into small and discrete light- emitting areas, each with its own spectral fingerprint and Stark shift. We explain this behavior in terms of Coulomb interaction effects and the selective excitation of a small number of QDs within the ensemble due to preferential resonant tunneling paths for carriers.

cond-mat.mes-hall

Absence of the Rashba effect in undoped asymmetric quantum wells

To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction seems to offer the possibility of gate-voltage control in spintronic devices but, as the electrons are subject to both ion-core and macroscopic structural potentials, this over-simple picture has lead to intense debate. For example, an externally applied field acting on the envelope of the electron wavefunction determined by the macroscopic potential, underestimates the experimentally observed spin-orbit field by many orders of magnitude while the Ehrenfest theorem suggests that it should actually be zero. Here we challenge, both experimentally and theoretically, the widely held belief that any inversion asymmetry of the macroscopic potential, not only electric field, will produce a significant spin-orbit field for electrons. This conclusion has far-reaching consequences for the design of spintronic devices while illuminating important fundamental physics.

cond-mat.other

Energy-Dependent Electron-Electron Scattering and Spin Dynamics in a Two Dimensional Electron Gas

Measurements of spin dynamics of electrons in a degenerate two dimensional electron gas, where the Dyakonov-Perel mechanism is dominant, have been used to investigate the electron scattering time (tp*) as a function of energy near the Fermi energy. Close to the Fermi energy the spin evolution is oscillatory, indicating a quasi-collision-free regime of spin dynamics. As the energy is increased a transition to exponential, collision-dominated, spin decay occurs. The frequency and the value of tp* are extracted using a Monte Carlo simulation method. At the Fermi energy tp* is very close to the ensemble momentum relaxation time (tp) obtained from the electron mobility. For higher energies tp* falls quadratically, consistent with theoretical expectations for the onset of electron-electron scattering which is inhibited by the Pauli principle at the Fermi energy.

cond-mat.other

Non-radiative exciton energy transfer in hybrid organic-inorganic heterostructures

Non-radiative optical energy transfer from a GaAs quantum well to a thin overlayer of an infrared organic semiconductor dye is unambiguously demonstrated. The dynamics of exciton transfer are studied in the time-domain using pump-probe spectroscopy at the donor site and fluorescence spectroscopy at the acceptor site. The effect is observed as simultaneous increase of the population decay rate at the donor and of the rise time of optical emission at the acceptor sites. The hybrid configuration under investigation provides an alternative non-radiative, non-contact pumping route to electrical carrier injection that overcomes the losses imposed by the associated low carrier mobility of organic emitters.

cond-mat.other

Temperature Dependence of Rashba Spin-orbit Coupling in Quantum Wells

We perform an all-optical spin-dynamic measurement of the Rashba spin-orbit interaction in (110)-oriented GaAs/AlGaAs quantum wells. The crystallographic direction of quantum confinement allows us to disentangle the contributions to spin-orbit coupling from the structural inversion asymmetry (Rashba term) and the bulk inversion asymmetry. We observe an unexpected temperature dependence of the Rashba spin-orbit interaction strength that signifies the importance of the usually neglected higher-order terms of the Rashba coupling.

cond-mat.other

Oscillatory D'yakonov-Perel' spin dynamics in two dimensional electron gases

Optical pump-probe measurements of spin-dynamics at temperatures down to 1.5K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional electron gases (2DEGs). For well widths ranging from 5 nm to 20 nm and 2DEG sheet densities from 1.75x1011cm-2 to 3.5x1011cm-2 the evolution of a small injected spin population is found to be a damped oscillation rather than exponential relaxation, consistent with the quasi-collision-free regime of D'yakonov-Perel spin dynamics. A Monte Carlo simulation method is used to extract the spin-orbit-induced electron spin precession frequency |W(kF)| and electron momentum scattering time tp* at the Fermi wavevector. The spin decay time passes through a minimum at a temperature corresponding to the transition from collision-free to collision-dominated regimes and tp* is found to be close to the ensemble momentum scattering time tp obtained from Hall measurements of electron mobility. The values of |W(kF)| give the Dresselhaus (BIA) coefficient of spin-orbit interaction as a function of electron confinement energy in the quantum show, qualitatively, the behaviour expected from k.p theory.

cond-mat.other

Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors

In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors. The single-particle Zeeman energy is tuned through the application of an additional in-plane magnetic field. Both the evolution of the spin polarization of the system and the critical magnetic field for spin splitting are well described as a function of the tilt angle of the sample in the magnetic field.

cond-mat.mes-hall

Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot

We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the latter field configuration, we observe a strong angular anisotropy of the enhanced current when B is rotated in the plane of the quantum dot layer. We attribute this behavior to the effect of the lowered symmetry of the QD eigenfunctions on the electron-electron interaction.

cond-mat.mes-hall

Enhanced spin relaxation time due to electron-electron scattering in semiconductors

We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature-, concentration- and quantum-well-width- dependencies of the spin relaxation rate of a small photoexcited electron population. A rapid enhancement of the spin life-time with temperature up to a maximum near the Fermi temperature of the 2DEG was demonstrated experimentally. These observations are consistent with the D'yakonov-Perel' spin relaxation mechanism controlled by electron-electron collisions. The experimental results and theoretical predictions for the spin relaxation times are in good quantitative agreement.

cond-mat.mes-hall

Resonance-like piezoelectric electron-phonon interaction in layered structures

We show that mismatch of the piezoelectric parameters between layers of multiple-quantum well structures leads to modification of the electron-phonon interaction. In particular, short-wavelength phonons propagating perpendicular to the layers with wavevector close to $2πn/d$, where $d$ is the period of the structure, induce a strong smoothly-varying component of the piezo-potential. As a result, they interact efficiently with 2D electrons. It is shown, that this property leads to emission of collimated quasi-monochromatic beams of high-frequency acoustic phonons from hot electrons in multiple-quantum well structures. We argue that this effect is responsible for the recently reported monochromatic transverse phonon emission from optically excited GaAs/AlAs superlattices, and provide additional experimental evidences of this.

cond-mat.mes-hall

Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced modulation of the spin-splitting are studied during the charging and discharging processes of p-type GaAs/AlAs double barrier resonant tunneling diodes (RTD) under applied bias and magnetic field. The abrupt changes in the photoluminescence, with the applied bias, provide information of the charge accumulation effects on the device.

cond-mat.mes-hall

The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition

Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic density of states and estimate the strength of many body interactions. A simple model with no free parameters correctly predicts the magnetic field required to observe spin splitting confirming that the appearance of spin splitting is a result of a competition between the disorder induced energy cost of flipping spins and the exchange energy gain associated with the polarized state. In this model, the single particle Zeeman energy plays no role, so that the appearance of this quantum Hall ferromagnet in the highest occupied Landau level can also be thought of as a magnetic field induced Stoner transition.

cond-mat.mes-hall

1/f noise in a dilute GaAs two-dimensional hole system in the insulating phase

We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature dependence of the resistance is either power-like or simply activated. The noise decreases when the temperature or the density increase. These results contradict the standard description of independent particles in the strong localization regime. On the contrary, they agree with the percolation picture suggested by higher density results. The physical nature of the system could be a mixture of a conducting and an insulating phase. We compare our results with those of composite thin films.

cond-mat.dis-nn