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New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime

L. A. Ponomarenko·D. T. N. de Lang·A. de Visser·D. Maude·B. N. Zvonkov·R. A. Lunin·A. M. M. Pruisken
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Abstract

We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plateau value h/e^2 through the PI transition. From the deviations of the Hall resistance from the quantized value, we obtain the corrections to scaling.

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L. A. Ponomarenko, D. T. N. de Lang, A. de Visser, D. Maude, B. N. Zvonkov, R. A. Lunin, A. M. M. Pruisken. 2003-08-19. New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime. https://doi.org/10.1016/j.physe.2003.11.257

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