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Strain, size and composition of InAs Quantum Sticks, embedded in InP, by means of Grazing Incidence X-ray Anomalous Diffraction

A. Letoublon·V. Favre-Nicolin·H. Renevier·M. G. Proietti·C. Monat·M. Gendry·O. Marty·C. Priester
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Abstract

We have used x-ray anomalous diffraction to extract the x-ray structure factor of InAs quantum stick-like islands, embedded in InP. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Diffraction Anomalous Fine Structure provides a clear evidence of pure InAs QSs. Finite Difference Method calculations reproduce well the diffraction data, and give the strain along the growth direction. Chemical mixing at interfaces is at most of 1ML

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A. Letoublon, V. Favre-Nicolin, H. Renevier, M. G. Proietti, C. Monat, M. Gendry, O. Marty, C. Priester. 2003-09-24. Strain, size and composition of InAs Quantum Sticks, embedded in InP, by means of Grazing Incidence X-ray Anomalous Diffraction. https://doi.org/10.1103/physrevlett.92.186101

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