arXiv subjects

A. Letoublon

Publications and source records attributed to A. Letoublon.

5 recordsLinked to original sources

arXiv2020

Zinc-Blende group III-V/group IV epitaxy: importance of the miscut

Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at the atomic scale by scanning tunneling microscopy. The steps arising from the miscut allow growth rate imbalance between the two phases of the crystal and the growth conditions can deeply modify the imbalance coefficient, as illustrated with GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration can be achieved even on low miscut substrates.

cond-mat.mtrl-sci↗

arXiv2018

A universal description of III-V/Si epitaxial growth processes

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation.

cond-mat.mtrl-sci↗

arXiv2007

Self-Organized Growth of Nanoparticles on a Surface Patterned by a Buried Dislocation Network

The self-organized growth of Co nanoparticles with 10 nm periodicity was achieved at room temperature on a Ag(001) surface patterned by an underlying dislocation network, as shown by real time, in situ Grazing Incidence Small and Wide Angle X-ray Scattering. The misfit dislocation network, buried at the interface between a 5nm-thick Ag thin film and a MgO(001) substrate, induces a periodic strain field on top of the surface. Nucleation and growth of Co on tensile areas are found as the most favorable sites as highlighted by Molecular Dynamic simulations.

cond-mat.mtrl-sci↗

arXiv2003

Diffraction Anomalous Fine Structure spectroscopy at the beamline BM2 at the European Synchrotron Radiation Facility

Diffraction Anomalous Fine Structure (DAFS) spectroscopy uses resonant elastic x-rays scattering as an atomic, shell and site selective probe that gives information on the electronic structure and the local atomic environment as well as on the long range ordered crystallographic structure. A DAFS experiment consists of measuring the Bragg peak intensities as a function of the energy of the incoming x-ray beam. The French CRG (Collaborative Research Group) beamline BM2-D2AM (Diffraction Diffusion Anomale Multi-longueurs d'onde) at the ESRF (European Synchrotron Radiation Facility) has developed a state of the art energy scan diffraction set-up. In this article, we present the requirements for obtaining reliable DAFS data and report recent technical achievements.

cond-mat↗

arXiv2003

Strain, size and composition of InAs Quantum Sticks, embedded in InP, by means of Grazing Incidence X-ray Anomalous Diffraction

We have used x-ray anomalous diffraction to extract the x-ray structure factor of InAs quantum stick-like islands, embedded in InP. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Diffraction Anomalous Fine Structure provides a clear evidence of pure InAs QSs. Finite Difference Method calculations reproduce well the diffraction data, and give the strain along the growth direction. Chemical mixing at interfaces is at most of 1ML

cond-mat↗