Point defect energetics in silicon using the LDA+U method

Panchapakesan Ramanarayanan; Renat F. Sabirianov; Kyeongjae Cho

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Point defect energetics in silicon using the LDA+U method

Panchapakesan Ramanarayanan·Renat F. Sabirianov·Kyeongjae Cho

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Abstract

We present the first principles results of point defect energetics in silicon calculated using the LDA+U method: a Hubbard type on-site interaction added to the local density approximation (LDA). The on-site Coulomb and exchange parameters were tuned to match the experimental band gap in Si. The relaxed configuration was obtained using the LDA; LDA+U was used only to calculate the energies. Our values of point defect energetics are in very good agreement with both recent experimental results and quantum Monte Carlo (QMC) calculations.

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Panchapakesan Ramanarayanan, Renat F. Sabirianov, Kyeongjae Cho. 2003-10-26. Point defect energetics in silicon using the LDA+U method. https://arxiv.org/abs/cond-mat/0310606

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