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Quantum dots based on spin properties of semiconductor heterostructures

M. Valin-Rodriguez·A. Puente·L. Serra
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Abstract

The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states having peculiar spin properties. Furthermore, from mean field calculations (local-spin-density and Hartree-Fock) we find that even two electrons could form a bound state in these dots.

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M. Valin-Rodriguez, A. Puente, L. Serra. 2004-02-12. Quantum dots based on spin properties of semiconductor heterostructures. https://doi.org/10.1103/physrevb.69.153308

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