Spin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach

Dmitri E. Nikonov; George I. Bourianoff

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arXiv · cond-mat/0312243

Spin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach

Dmitri E. Nikonov·George I. Bourianoff

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Abstract

Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large magnetized current is extracted. Therefore spin gain of more than 1000 is predicted. Collective dynamics of spins under Coulomb exchange interaction is described via Semiconductor Bloch Equations.

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Dmitri E. Nikonov, George I. Bourianoff. 2003-12-10. Spin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach. https://arxiv.org/abs/cond-mat/0312243

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