Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Yongqiang Xue; Mark A. Ratner

doi:10.1063/1.1613355

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arXiv · cond-mat/0312546

Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Yongqiang Xue·Mark A. Ratner

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Abstract

Electronic properties of metal-finite semiconducting carbon nanotube interfaces are studied as a function of the nanotube length using a self-consistent tight-binding theory. We find that the shape of the potential barrier depends on the long-range tail of the charge transfer, leading to an injection barrier thickness comparable to half of the nanotube length until the nanotube reaches the bulk limit. The conductance of the nanotube junction shows a transition from tunneling to thermally-activated transport with increasing nanotube length.

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Yongqiang Xue, Mark A. Ratner. 2003-12-20. Schottky barriers at metal-finite semiconducting carbon nanotube interfaces. https://doi.org/10.1063/1.1613355

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