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Yongqiang Xue

Publications and source records attributed to Yongqiang Xue.

15 recordsLinked to original sources

Molecular Electronics: From Physics to Computing

Even if Moore's Law continues to hold, it will take about 250 years to fill the performance gap between present-day computer and the ultimate computer determined from the laws of physics alone. Information processing technology in the post-CMOS era will likely consist of a heterogeneous set of novel device technologies that span a broad range of materials, operational principles, data representations, logic systems and architectures. Molecular nanostructures promise to occupy a prominent role in any attempt to extend charge-based device technology beyond the projected limits of CMOS scaling. We discuss the potentials and challenges of molecular electronics and identify the fundamental knowledge gap that needs to be addressed for a successful introduction of molecule-enabled computing technology

cond-mat.mes-hall

Electron transport in semiconducting carbon nanotubes with hetero-metallic contacts

We present an atomistic self-consistent study of the electronic and transport properties of semiconducting carbon nanotube in contact with metal electrodes of different work functions, which shows simultaneous electron and hole doping inside the nanotube junction through contact-induced charge transfer. We find that the band lineup in the nanotube bulk region is determined by the effective work function difference between the nanotube channel and source/drain electrodes, while electron transmission through the SWNT junction is affected by the local band structure modulation at the two metal-nanotube interfaces, leading to an effective decoupling of interface and bulk effects in electron transport through nanotube junction devices.

cond-mat.mes-hall

Theoretical Principles of Single-Molecule Electronics: A Chemical and Mesoscopic View

Exploring the use of individual molecules as active components in electronic devices has been at the forefront of nanoelectronics research in recent years. Compared to semiconductor microelectronics, modeling transport in single-molecule devices is much more difficult due to the necessity of including the effects of the device electronic structure and the interface to the external contacts at the microscopic level. Theoretical formulation of the problem therefore requires integrating the knowledge base in surface science, electronic structure theory, quantum transport and device modeling into a single unified framework starting from the first-principles. In this paper, we introduce the theoretical framework for modeling single-molecule electronics and present a simple conceptual picture for interpreting the results of numerical computation. We model the device using a self-consistent matrix Green's function method that combines Non-Equilibrium Green's function theory of quantum transport with atomic-scale description of the device electronic structure. We view the single-molecule device as "heterostructures" composed of chemically well-defined atomic groups, and analyze the device characteristics in terms of the charge and potential response of these atomic groups to perturbation induced by the metal-molecule coupling and the applied bias voltage. We demonstrate the power of this approach using as examples devices formed by attaching benzene-based molecules of different size and internal structure to the gold electrodes through sulfur end atoms.

cond-mat.mes-hall

Scaling analysis of electron transport through metal-semiconducting carbon nanotube interfaces: Evolution from the molecular limit to the bulk limit

We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale electronic structure and three-dimensional electrostatics of the metal-nanotube interface using a real-space Green's function based self-consistent tight-binding theory. As the first example, we examine devices formed by attaching finite-size single-wall carbon nanotubes (SWNT) to both high- and low- work function metallic electrodes through the dangling bonds at the end. We analyze the nature of Schottky barrier formation at the metal-nanotube interface by examining the electrostatics, the band lineup and the conductance of the metal-SWNT molecule-metal junction as a function of the SWNT molecule length and metal-SWNT coupling strength. We show that the confined cylindrical geometry and the atomistic nature of electronic processes across the metal-SWNT interface leads to a different physical picture of band alignment from that of the planar metal-semiconductor interface. We analyze the temperature and length dependence of the conductance of the SWNT junctions, which shows a transition from tunneling- to thermal activation-dominated transport with increasing nanotube length. The temperature dependence of the conductance is much weaker than that of the planar metal-semiconductor interface due to the finite number of conduction channels within the SWNT junctions. We find that the current-voltage characteristics of the metal-SWNT molecule-metal junctions are sensitive to models of the potential response to the applied source/drain bias voltages.

cond-mat.mes-hall

Mechanical modulation of single-electron tunneling through molecular-assembled metallic nanoparticles

We present a microscopic study of single-electron tunneling in nanomechanical double-barrier tunneling junctions formed using a vibrating scanning nanoprobe and a metallic nanoparticle connected to a metallic substrate through a molecular bridge. We analyze the motion of single electrons on and off the nanoparticle through the tunneling current, the displacement current and the charging-induced electrostatic force on the vibrating nanoprobe. We demonstrate the mechanical single-electron turnstile effect by applying the theory to a gold nanoparticle connected to the gold substrate through alkane dithiol molecular bridge and probed by a vibrating platinum tip.

cond-mat.mes-hall

Local-field effects in current transport through molecular electronic devices: Current density profiles and local non-equilibrium electron distributions

We analyze non-equilibrium current transport in molecular electronic devices, using as an example devices formed by two terphenyl dithiol molecules attached to gold electrodes. Using a first-principles based self-consistent matrix Green's function method, we show that the spatially resolved current density profiles and local electrochemical potential drops provide valuable information regarding the local field effect on molecular transport, which depend on the internal structure of the molecules and cannot be obtained from measuring the current- and conductance-voltage characteristics alone.

cond-mat.mes-hall

Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces

We present an atomistic self-consistent tight-binding study of the electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube channel length when the end of the nanotube wire is buried inside the electrodes. We show that the lineup of the nanotube band structure relative to the metal Fermi-level depends strongly on the metal work function but weakly on the details of the interface. We analyze the length-dependent transport characteristics, which predicts a transition from tunneling to thermally-activated transport with increasing nanotube channel length.

cond-mat.mes-hall

Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Electronic properties of metal-finite semiconducting carbon nanotube interfaces are studied as a function of the nanotube length using a self-consistent tight-binding theory. We find that the shape of the potential barrier depends on the long-range tail of the charge transfer, leading to an injection barrier thickness comparable to half of the nanotube length until the nanotube reaches the bulk limit. The conductance of the nanotube junction shows a transition from tunneling to thermally-activated transport with increasing nanotube length.

cond-mat.mes-hall

Microscopic theory of single-electron tunneling through molecular-assembled metallic nanoparticles

We present a microscopic theory of single-electron tunneling through metallic nanoparticles connected to the electrodes through molecular bridges. It combines the theory of electron transport through molecular junctions with the description of the charging dynamics on the nanoparticles. We apply the theory to study single-electron tunneling through a gold nanoparticle connected to the gold electrodes through two representative benzene-based molecules. We calculate the background charge on the nanoparticle induced by the charge transfer between the nanoparticle and linker molecules, the capacitance and resistance of molecular junction using a first-principles based Non-Equilibrium Green's Function theory. We demonstrate the variety of transport characteristics that can be achieved through ``engineering'' of the metal-molecule interaction.

cond-mat.mes-hall

End group effect on electrical transport through individual molecules: A microscopic study

The effect on molecular transport due to chemical modification of the metal-molecule interface is investigated, using as an example the prototypical molecular device formed by attaching a p-disubstituted benzene molecule onto two gold electrodes through chemically different end groups. Using a first-principles based self-consistent matrix Green's function method, we find that depending on the end group, transport through the molecule can be mediated by either near-resonant-tunneling or off-resonant-tunneling and the conductance of the molecule varies over more than two orders of magnitude. Despite the symmetric device structure of all the molecules studied, the applied bias voltage can be dropped either equally between the two metal-molecule contacts or mostly across the source (electron-injecting) contact depending on the potential landscape across the molecular junction at equilibrium.

cond-mat.mes-hall

Probability of anomalously large Bit-Error-Rate in long haul optical transmission

We consider a linear model of optical pulse transmission through fiber with birefringent disorder in the presence of amplifier noise. Both disorder and noise are assumed to be weak, i.e. the average bit-error rate (BER) is small. The probability of rare violent events leading to the values of BER much larger than its typical value is estimated. We show that the probability distribution has a long algebraic tail.

cond-mat.stat-mech

Microscopic study of electrical transport through individual molecules with metallic contacts: II. Effect of the interface structure

We investigate the effect on molecular transport due to the different structural aspects of metal-molecule interfaces. The example system chosen is the prototypical molecular device formed by sandwiching the phenyl dithiolate molecule (PDT) between two gold electrodes with different metal-molecule distance, atomic structure at the metallic surface, molecular adsorption geometry and with an additional hydrogen end atom. We find the dependence of the conductance on the metal-molecule interface structure is determined by the competition between the modified metal-molecule coupling and the corresponding modified energy level lineup at the molecular junction. The results of the detailed microscopic calculation can all be understood qualitatively from the equilibrium energy level lineup and the knowledge of the voltage drop across the molecular junction at finite bias voltages.

cond-mat.mes-hall

First-Principles Based Matrix-Green's Function Approach to Molecular Electronic Devices: General Formalism

Transport in molecular electronic devices is different from that in semiconductor mesoscopic devices in two important aspects: (1) the effect of the electronic structure and (2) the effect of the interface to the external contact. A rigorous treatment of molecular electronic devices will require the inclusion of these effects in the context of an open system exchanging particle and energy with the external environment. This calls for combining the theory of quantum transport with the theory of electronic structure starting from the first-principles. We present a rigorous yet tractable matrix Green's function approach for studying transport in molecular electronic devices, based on the Non-Equilibrium Green's Function Formalism of quantum transport and the density-functional theory of electronic structure using local orbital basis sets. By separating the device rigorously into the molecular region and the contact region, we can take full advantage of the natural spatial locality associated with the metallic screening in the electrodes and focus on the physical processes in the finite molecular region. This not only opens up the possibility of using the existing well-established technique of molecular electronic structure theory in transport calculations with little change, but also allows us to use the language of qualitative molecular orbital theory to interpret and rationalize the results of the computation. For the device at equilibrium, our method provides an alternative approach for solving the molecular chemisorption problem. For the device out of equilibrium, we show that the calculation of elastic current transport through molecules, both conceptually and computationally, is no more difficult than solving the chemisorption problem.

cond-mat.mes-hall

Fermi-level alignment at metal-carbon nanotube interfaces: application to scanning tunneling spectroscopy

At any metal-carbon nanotube interface there is charge transfer and the induced interfacial field determines the position of the carbon nanotube band structure relative to the metal Fermi-level. In the case of a single-wall carbon nanotube (SWNT) supported on a gold substrate, we show that the charge transfers induce a local electrostatic potential perturbation which gives rise to the observed Fermi-level shift in scanning tunneling spectroscopy (STS) measurements. We also discuss the relevance of this study to recent experiments on carbon nanotube transistors and argue that the Fermi-level alignment will be different for carbon nanotube transistors with low resistance and high resistance contacts.

cond-mat.mes-hall

Negative Differential Resistance in the Scanning Tunneling Spectroscopy of Organic molecules

The conductance-voltage spectrum of molecular nanostructures measured by scanning tunneling spectroscopy (STS) is generally assumed to reflect the local density of states of the molecule. This excludes the possibility of observing negative differential resistance (NDR). We report here the observation of NDR in the scanning tunneling microscope (STM) current-voltage (I-V) characteristics of self-assembled monolayer (SAM) of 4-p-Terphenylthiol molecules on gold substrate measured using a platinum probe. We argue that the NDR arises from narrow structures in the local density of states at the tip apex atom and show that depending on the electrostatic potential profile across the system, NDR could be observed in one or both bias directions.

cond-mat.mes-hall