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Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

V. Podzorov·M. E. Gershenson·Ch. Kloc·R. Zeis·E. Bucher
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Abstract

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the p-type conductivity in the WSe2-based FETs at room temperature). These novel FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in "flexible" electronics.

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V. Podzorov, M. E. Gershenson, Ch. Kloc, R. Zeis, E. Bucher. 2004-01-14. Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides. https://doi.org/10.1063/1.1723695

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