arXiv subjects

R. Zeis

Publications and source records attributed to R. Zeis.

2 recordsLinked to original sources

arXiv2004

Single crystal field-effect transistors based on an organic selenium-containing semiconductor

We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7V and charge carrier mobility is nearly gate bias independent, ranging from 1cm2/Vs to 1.5 cm2/Vs depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.

cond-mat.mtrl-sci↗

arXiv2004

Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the p-type conductivity in the WSe2-based FETs at room temperature). These novel FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in "flexible" electronics.

cond-mat.mtrl-sci↗