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Conductance modulation in spin field-efect transistors under finite bias voltages

Liangbin Hu·Ju Gao·Shun-Qing Shen
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Abstract

The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession states of injected spin-polarized electrons in the semiconductor channel of the device will depend not only the gate-voltage controlled Rashba spin-orbit coupling but also depend on the bias voltage and, hence, the conductance modulation in the device due to Rashba spin-orbit coupling may also depend sensitively on the bias voltage.

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Liangbin Hu, Ju Gao, Shun-Qing Shen. 2004-03-08. Conductance modulation in spin field-efect transistors under finite bias voltages. https://doi.org/10.1103/physrevb.69.165304

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