SearcharxivSearch

arXiv subjects

Liangbin Hu

Publications and source records attributed to Liangbin Hu.

13 recordsLinked to original sources

The fermi arc and fermi pocket in cuprates in a short-range diagonal stripe phase

In this paper we studied the fermi arc and the fermi pocket in cuprates in a short-range diagonal stripe phase with wave vectors $(7π/8, 7π/8)$, which reproduce with a high accuracy the positions and sizes of the fermi arc and fermi pocket and the superstructure in cuprates observed by Meng et al\cite{Meng}. The low-energy spectral function indicates that the fermi pocket results from the main band and the shadow band at the fermi energy. Above the fermi energy the shadow band gradually departs away from the main band, leaving a fermi arc. Thus we conclude that the fermi arc and fermi pocket can be fully attributed to the stripe phase but has nothing to do with pairing. Incorporating a d-wave pairing potential in the stripe phase the spectral weight in the antinodal region is removed, leaving a clean fermi pocket in the nodal region.

cond-mat.supr-con

Andreev reflection and tunneling spectrum in a superlattice of metal-superconductor junctions

The tunneling spectrum of an electron and a hole in a superlattice of NS junctions is computed using the BTK approach and the transfer matrix method. It shows sharp resonances at some energies above the superconducting gap. The sharper the resonance is the more layers the superlattice has. We find for the first time a mechanism to balance the incident and outgoing currents on the superlattice by averaging over the phase between the incident electron and the incident hole. This mechanism is more natural and physical than those in literatures.

cond-mat.supr-con

Andreev reflection and tunneling spectrum in metal-superconductor-metal junctions

The tunneling spectrum of an electron and a hole in metal-superconductor-metal junctions is computed using the Blonder-Tinkham-Klapwijk theory. The incident and the outgoing currents finally balance each other by an interface charge inside the superconductor and metal junction. The present computation shows a more abundant structure compared to that on a metal-superconductor junction, such as the resonance at bias voltages above the energy gap of the superconductor. The density of the interface charge shows a quantum-like oscillation.

cond-mat.supr-con

Repulsion and attraction in high Tc superconductors

The influence of repulsion and attraction in high-Tc superconductors to the gap functions is studied. A systematic method is proposed to compute the gap functions using the irreducible representations of the point group. It is found that a pure s-wave superconductivity exists only at very low temperatures, and attractive potentials on the near shells significantly expand the gap functions and increase significantly the critical temperature of superconductivity. A strong on-site repulsion drives the $A_{1g}$ gap into a $B_{1g}$ gap. It is expected that superconductivity with the $A_{1g}$ symmetry reaches a high critical temperature due to the cooperation of the on-site and the next-nearest neighbor attractions.

cond-mat.supr-con

Spin density wave in oxypnictide superconductors in a three-band model

The spin density wave and its temperature dependence in oxypnictide are studied in a three-band model. The spin susceptibilities with various interactions are calculated in the random phase approximation(PPA). It is found that the spin susceptibility peaks around the M point show a spin density wave(SDW) with momentum (0, $π$) and a clear stripe-like spin configuration. The intra-band Coulomb repulsion enhances remarkably the SDW but the Hund's coupling weakens it. It is shown that a new resonance appears at higher temperatures at the $Γ$ point indicating the formation of a paramagnetic phase. There is a clear transition from the SDW phase to the paramagnetic phase.

cond-mat.supr-con

Some symmetry properties of spin currents and spin polarizations in multi-terminal mesoscopic spin-orbit coupled systems

We study theoretically some symmetry properties of spin currents and spin polarizations in multi-terminal mesoscopic spin-orbit coupled systems. Based on a scattering wave function approach, we show rigorously that in the equilibrium state no finite spin polarizations can exist in a multi-terminal mesoscopic spin-orbit coupled system (both in the leads and in the spin-orbit coupled region) and also no finite equilibrium terminal spin currents can exist. By use of a typical two-terminal mesoscopic spin-orbit coupled system as the example, we show explicitly that the nonequilibrium terminal spin currents in a multi-terminal mesoscopic spin-orbit coupled system are non-conservative in general. This non-conservation of terminal spin currents is not caused by the use of an improper definition of spin current but is intrinsic to spin-dependent transports in mesoscopic spin-orbit coupled systems. We also show that the nonequilibrium lateral edge spin accumulation induced by a longitudinal charge current in a thin strip of \textit{finite} length of a two-dimensional electronic system with intrinsic spin-orbit coupling may be non-antisymmetric in general, which implies that some cautions may need to be taken when attributing the occurrence of nonequilibrium lateral edge spin accumulation induced by a longitudinal charge current in such a system to an intrinsic spin Hall effect.

cond-mat.mes-hall

Scattering wave function approach to multi-terminal mesoscopic system with spin-orbit coupling

In this paper,we present a detailed formulation to solve the scattering wave function for a multi-terminal mesoscopic system with spin-orbit coupling. In addition to terminal currents, all local quantities can be calculated explicitly by taking proper ensemble average in the Landauer-Buttiker's spirit using the scattering wave functions. Based on this formulation, we derive some rigorous results for equilibrium state. Furthermore, some new symmetry relations are found for the typical two terminal structure in which a semiconductor bar with Rashba or/and Dresselhaus SO coupling is sandwiched symmetrically between two leads. These symmetry property can provide accuracy tests for experimental measurements and numerical calculations.

cond-mat.mes-hall

Kinetic magnetoelectric effect in a 2D semiconductor strip due to boundary-confinement induced spin-orbit coupling

In a thin strip of a two-dimensional semiconductor electronic system, spin-orbit coupling may be induced near both edges of the strip due to the substantial spatial variation of the confining potential in the boundary regions. In this paper we show that, in the presence of boundary-confinement induced spin-orbit coupling, a longitudinal charge current circulating through a 2D semiconductor strip may cause \textit{strong} non-equilibrium spin accumulation near both edges of the strip. The spins will be polarized along the normal of the 2DEG plane but in opposite directions at both edges of the strip. This phenomenon is essentially a kinetic magnetoelectric effect from the theoretical points of view, but it manifests in a very similar form as was conceived in a spin Hall effect.

cond-mat.mes-hall

Spin resolved Hall effect driven by spin-orbit coupling

Spin and electric Hall currents are calculated numerically in a two-dimensional mesoscopic system with Rashba and Dresselhaus spin-orbit coupling by means of the Landauer-Buttiker formalism. It is found that both electric and spin Hall currents circulate when two spin-orbit couplings coexist, while the electric Hall conductance vanishes if either one is absent. The electric and spin Hall conductances are suppressed in strong disorder, but survive in weak disorder. Physically it can be understood that the spinomotive transverse "force" generated by spin-orbit coupling is responsible for the formation of the spin Hall current and the lack of transverse reflection symmetry is the origin of the electric Hall current.

cond-mat.mes-hall

Effects of spin imbalance on the electric-field driven quantum dissipationless spin current in $p$-doped Semiconductors

It was proposed recently by Murakami et al. [Science \textbf{301}, 1348(2003)] that in a large class of $p$-doped semiconductors, an applied electric field can drive a quantum dissipationless spin current in the direction perpendicular to the electric field. In this paper we investigate the effects of spin imbalance on this intrinsic $spin$ Hall effect. We show that in a real sample with boundaries, due to the presence of spin imbalance near the edges of the sample, the spin Hall conductivity is not a constant but a sensitively $position$-$dependent$ quantity, and due to this fact, in order to take the effects of spin imbalance properly into account, a microscopic calculation of both the quantum dissipationless spin Hall current and the spin accumulation on an equal footing is thus required. Based on such a microscopic calculation, a detailed discussion of the effects of spin imbalance on the intrinsic spin Hall effect in thin slabs of $p$-doped semiconductors are presented.

cond-mat.mes-hall

Influences of spin accumulation on the intrinsic spin Hall effect in two dimensional electron gases with Rashba spin-orbit coupling

In a two dimensional electron gas with Rashba spin-orbit coupling, the external electric field may cause a spin Hall current in the direction perpendicular to the electric field. This effect was called the intrinsic spin Hall effect. In this paper, we investigate the influences of spin accumulation on this intrinsic spin Hall effect. We show that due to the existence of boundaries in a real sample, the spin Hall current generated by the intrinsic spin Hall effect will cause spin accumulation near the edges of the sample, and in the presence of spin accumulation, the spin Hall conductivity will not have a universal value. The influences of spin accumulation on the intrinsic spin Hall effect in narrow strips of two dimensional electron gases with Rashba spin-orbit coupling are investigated in detail.

cond-mat.mes-hall

Conductance modulation in spin field-efect transistors under finite bias voltages

The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession states of injected spin-polarized electrons in the semiconductor channel of the device will depend not only the gate-voltage controlled Rashba spin-orbit coupling but also depend on the bias voltage and, hence, the conductance modulation in the device due to Rashba spin-orbit coupling may also depend sensitively on the bias voltage.

cond-mat.mes-hall

Theoretical investigation on the possibility of preparing left-handed materials in metallic magnetic granular composites

We investigate the possibility of preparing left-handed materials in metallic magnetic granular composites. Based on the effective medium approximation, we show that by incorporating metallic magnetic nanoparticles into an appropriate insulating matrix and controlling the directions of magnetization of metallic magnetic components and their volume fraction, it may be possible to prepare a composite medium of low eddy current loss which is left-handed for electromagnetic waves propagating in some special direction and polarization in a frequency region near the ferromagnetic resonance frequency. This composite may be easier to make on an industrial scale. In addition, its physical properties may be easily tuned by rotating the magnetization locally.

cond-mat.mtrl-sci