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Fabrication of Conducting Si Nanowire Arrays

E. Johnston-Halperin·R. A. Beckman·N. A. Melosh·Y. Luo·J. E. Green·J. R. Heath
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Abstract

The recent development of the superlattice nanowire pattern transfer (SNAP) technique allows for the fabrication of arrays of nanowires at a diameter, pitch, aspect ratio, and regularity beyond competing approaches. Here, we report the fabrication of conducting Si nanowire arrays with wire widths and pitches of 10-20 nm and 40-50 nm, respectively, and resistivity values comparable to the bulk through the selection of appropriate silicon-on-insulator substrates, careful reactive-ion etching, and spin-on glass doping. These results promise the realization of interesting nano-electronic circuits and devices, including chemical and biological sensors, nano-scale mosaics for molecular electronics, and ultra-dense field-effect transistor (FET) arrays.

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E. Johnston-Halperin, R. A. Beckman, N. A. Melosh, Y. Luo, J. E. Green, J. R. Heath. 2004-03-19. Fabrication of Conducting Si Nanowire Arrays. https://arxiv.org/abs/cond-mat/0403518

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