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Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces

Yongqiang Xue·Mark A. Ratner
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Abstract

We present an atomistic self-consistent tight-binding study of the electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube channel length when the end of the nanotube wire is buried inside the electrodes. We show that the lineup of the nanotube band structure relative to the metal Fermi-level depends strongly on the metal work function but weakly on the details of the interface. We analyze the length-dependent transport characteristics, which predicts a transition from tunneling to thermally-activated transport with increasing nanotube channel length.

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Yongqiang Xue, Mark A. Ratner. 2004-03-28. Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces. https://doi.org/10.1103/physrevb.69.161402

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