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Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions

G. D. Fuchs·N. C. Emley·I. N. Krivorotov·P. M. Braganca·E. M. Ryan·S. I. Kiselev·J. C. Sankey·J. A. Katine·D. C. Ralph·R. A. Buhrman
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Abstract

We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required for magnetic switching are similar to values for all-metallic spin-valve devices. In the tunnel junctions, spin-transfer-driven switching can occur at voltages that are high enough to quench the tunnel magnetoresistance, demonstrating that the current remains spin-polarized at these voltages.

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G. D. Fuchs, N. C. Emley, I. N. Krivorotov, P. M. Braganca, E. M. Ryan, S. I. Kiselev, J. C. Sankey, J. A. Katine, D. C. Ralph, R. A. Buhrman. 2004-04-02. Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions. https://doi.org/10.1063/1.1781769

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