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Ultrahigh-Field Hole Cyclotron Resonance Absorption in InMnAs Films

Y. H. Matsuda·G. A. Khodaparas·M. A. Zudov·J. Kono·Y. Sun·F. V. Kyrychenko·G. D. Sanders·C. J. Stanton·N. Miura·S. Ikeda·Y. Hashimoto·S. Katsumoto·H. Munekata
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Abstract

We have carried out an ultrahigh-field cyclotron resonance study of p-type In1-xMnxAs films, with Mn composition x ranging from 0% to 2.5%, grown on GaAs by low-temperature molecular-beam epitaxy. Pulsed magnetic fields up to 500 T were used to make cyclotron resonance observable in these low-mobility samples. The clear observation of hole cyclotron resonance is direct evidence of the existence of a large number of itinerant, effective-mass-type holes rather than localized d-like holes. It further suggests that the p-d exchange mechanism is more favorable than the double exchange mechanism in this narrow gap InAs-based dilute magnetic semiconductor. In addition to the fundamental heavy-hole and light-hole cyclotron resonance absorption appearing near the high-magnetic-field quantum limit, we observed many inter-Landau-level absorption bands whose transition probabilities are stronglydependent on the sense of circular polarization of the incident light.

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Y. H. Matsuda, G. A. Khodaparas, M. A. Zudov, J. Kono, Y. Sun, F. V. Kyrychenko, G. D. Sanders, C. J. Stanton, N. Miura, S. Ikeda, Y. Hashimoto, S. Katsumoto, H. Munekata. 2004-04-27. Ultrahigh-Field Hole Cyclotron Resonance Absorption in InMnAs Films. https://doi.org/10.1103/physrevb.70.195211

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