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Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

Ali Javey·Jing Guo·Damon B. Farmer·Qian Wang·Erhan Yenilmez·Roy G. Gordon·Mark Lundstrom·Hongjie Dai
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Abstract

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained.

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Ali Javey, Jing Guo, Damon B. Farmer, Qian Wang, Erhan Yenilmez, Roy G. Gordon, Mark Lundstrom, Hongjie Dai. 2004-06-21. Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays. https://doi.org/10.1021/nl049222b

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