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Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field

Yeekin Tsui·S. A. Vitkalov·M. P. Sarachik·T. M. Klapwijk
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Abstract

A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a magnetic field. We show explicitly and quantitatively that a magnetic field applied parallel to the plane of the electrons reduces the slope of the conductivity versus temperature curves to near zero over a broad range of electron densities extending from $n_c$ to deep in the metallic regime where the high field conductivity is on the order of $10 e^2/h$. The strong suppression (or "quenching") of the metallic behavior by a magnetic field sets an important constraint on theory.

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Yeekin Tsui, S. A. Vitkalov, M. P. Sarachik, T. M. Klapwijk. 2004-06-23. Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field. https://doi.org/10.1103/physrevb.71.113308

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