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Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc

M. Adell·V. Stanciu·J. Kanski·L. Ilver·J. Sadowski·J. Z. Domagala·P. Svedlindh·F. Terki·C. Hernandez·S. Charar
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Abstract

We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier.

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M. Adell, V. Stanciu, J. Kanski, L. Ilver, J. Sadowski, J. Z. Domagala, P. Svedlindh, F. Terki, C. Hernandez, S. Charar. 2004-11-15. Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc. https://doi.org/10.1063/1.1875746

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