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P. Svedlindh

Publications and source records attributed to P. Svedlindh.

At least 19 recordsLinked to original sources

Element resolved evidence of superdiffusive terahertz spin current arising from ultrafast demagnetization process

Using element-specific measurements of the ultrafast demagnetization of Ru/Fe$_{65}$Co$_{35}$ heterostructures, we show that Ru can exhibit a significant magnetic contrast (3% asymmetry) resulting from ultrafast spin currents emanating from the demagnetization process of the FeCo layer. We use this magnetic contrast to investigate how superdiffusive spin currents are affected by the doping of heavy elements in the FeCo layer. We find that the spin currents are strongly suppressed, and that the recovery process in Ru slows down, by Re doping. This is in accordance with a change in interface reflectivity of spin currents as found by the superdiffusive spin transport model.

cond-mat.mtrl-sci

Direct evidence of terahertz emission arising from anomalous Hall effect

A detailed understanding of the different mechanisms being responsible for terahertz (THz) emission in ferromagnetic (FM) materials will aid in designing efficient THz emitters. In this report, we present direct evidence of THz emission from single layer Co$_{0.4}$Fe$_{0.4}$B$_{0.2}$ (CoFeB) FM thin films. The dominant mechanism being responsible for the THz emission is the anomalous Hall effect (AHE), which is an effect of a net backflow current in the FM layer created by the spin-polarized current reflected at the interfaces of the FM layer. The THz emission from the AHE-based CoFeB emitter is optimized by varying its thickness, orientation, and pump fluence of the laser beam. Results from electrical transport measurements show that skew scattering of charge carriers is responsible for the THz emission in the CoFeB AHE-based THz emitter.

cond-mat.mtrl-sci

Ultrafast magnetization dynamics in half-metallic Co$_2$FeAl Heusler alloy

We report on optically induced, ultrafast magnetization dynamics in the Heusler alloy $\mathrm{Co_{2}FeAl}$, probed by time-resolved magneto-optical Kerr effect. Experimental results are compared to results from electronic structure theory and atomistic spin-dynamics simulations. Experimentally, we find that the demagnetization time ($τ_{M}$) in films of $\mathrm{Co_{2}FeAl}$ is almost independent of varying structural order, and that it is similar to that in elemental 3d ferromagnets. In contrast, the slower process of magnetization recovery, specified by $τ_{R}$, is found to occur on picosecond time scales, and is demonstrated to correlate strongly with the Gilbert damping parameter ($α$). Our results show that $\mathrm{Co_{2}FeAl}$ is unique, in that it is the first material that clearly demonstrates the importance of the damping parameter in the remagnetization process. Based on these results we argue that for $\mathrm{Co_{2}FeAl}$ the remagnetization process is dominated by magnon dynamics, something which might have general applicability.

cond-mat.mtrl-sci

Doping induced site-selective Mott insulating phase in LaFeO$_3$

Tailoring transport properties of strongly correlated electron systems in a controlled fashion counts among the dreams of materials scientists. In copper oxides, varying the carrier concentration is a tool to obtain high-temperature superconducting phases. In manganites, doping results in exotic physics such as insulator-metal transitions (IMT), colossal magnetoresistance (CMR), orbital- or charge-ordered (CO) or charge-disproportionate (CD) states. In most oxides, antiferromagnetic order and charge-disproportionation are asssociated with insulating behavior. Here we report the realization of a unique physical state that can be induced by Mo doping in LaFeO$_3$: the resulting metallic state is a site-selective Mott insulator where itinerant electrons evolving in low-energy Mo states coexist with localized carriers on the Fe sites. In addition, a local breathing-type lattice distortion induces charge disproportionation on the latter, without destroying the antiferromagnetic order. A state, combining antiferromangetism, metallicity and CD phenomena is rather rare in oxides and may be of utmost significance for future antiferromagnetic memory devices.

cond-mat.str-el

Magnetic properties of Ruddlesden-Popper phases Sr$_{3-x}$Y$_{x}$(Fe$_{1.25}$Ni$_{0.75}$)O$_{7-δ}$: A combined experimental and theoretical investigation

We present a comprehensive study of the magnetic properties of Sr$_{3-x}$Y$_{x}$(Fe$_{1.25}$Ni$_{0.75}$)O$_{7-δ}$ ($0 \leq x \leq 0.75$). Experimentally, the magnetic properties are investigated using superconducting quantum interference device (SQUID) magnetometry and neutron powder diffraction (NPD). This is complemented by the theoretical study based on density functional theory as well as the Heisenberg exchange parameters. Experimental results show an increase in the Néel temperature ($T_N$) with the increase of Y concentrations and O occupancy. The NPD data reveals all samples are antiferromagnetically ordered at low temperatures, which has been confirmed by our theoretical simulations for the selected samples. Our first-principles calculations suggest that the 3D magnetic order is stabilized due to finite inter-layer exchange couplings. The latter give rise to a finite inter-layer spin correlations which disappear above the $T_N$.

cond-mat.mtrl-sci

Temperature induced phase transition from cycloidal to collinear antiferromagnetism in multiferroic Bi$_{0.9}$Sm$_{0.1}$FeO$_3$ driven by $f$-$d$ induced magnetic anisotropy

In multiferroic BiFeO$_3$ a cycloidal antiferromagnetic structure is coupled to a large electric polarization at room temperature, giving rise to magnetoelectric functionality that may be exploited in novel multiferroic-based devices. In this paper, we demonstrate that by substituting samarium for 10% of the bismuth ions the periodicity of the room temperature cycloid is increased, and by cooling below $\sim15$ K the magnetic structure tends towards a simple G-type antiferromagnet, which is fully established at 1.5 K. We show that this transition results from $f-d$ exchange coupling, which induces a local anisotropy on the iron magnetic moments that destroys the cycloidal order - a result of general significance regarding the stability of non-collinear magnetic structures in the presence of multiple magnetic sublattices.

cond-mat.str-el

Dynamics of diluted magnetic semiconductors from atomistic spin dynamics simulations: Mn doped GaAs as a case study

The dynamical behavior of the magnetism of diluted magnetic semiconductors (DMS) has been investigated by means of atomistic spin dynamics simulations. The conclusions drawn from the study are argued to be general for DMS systems in the low concentration limit, although all simulations are done for 5% Mn-doped GaAs with various concentrations of As antisite defects. The magnetization curve, $M(T)$, and the Curie temperature $T_C$ have been calculated, and are found to be in good correspondence to results from Monte Carlo simulations and experiments. Furthermore, equilibrium and non-equilibrium behavior of the magnetic pair correlation function have been extracted. The dynamics of DMS systems reveals a substantial short ranged magnetic order even at temperatures at or above the ordering temperature, with a non-vanishing pair correlation function extending up to several atomic shells. For the high As antisite concentrations the simulations show a short ranged anti-ferromagnetic coupling, and a weakened long ranged ferromagnetic coupling. For sufficiently large concentrations we do not observe any long ranged ferromagnetic correlation. A typical dynamical response shows that starting from a random orientation of moments, the spin-correlation develops very fast ($\sim$ 1ps) extending up to 15 atomic shells. Above $\sim$ 10 ps in the simulations, the pair correlation is observed to extend over some 40 atomic shells. The autocorrelation function has been calculated and compared with ferromagnets like bcc Fe and spin-glass materials. We find no evidence in our simulations for a spin-glass behaviour, for any concentration of As antisites. Instead the magnetic response is better described as slow dynamics, at least when compared to that of a regular ferromagnet like bcc Fe.

cond-mat.mtrl-sci

Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers

The dependence of the magnetic anisotropy of As-capped (Ga,Mn)As epilayers on the annealing parameters - temperature and time - has been investigated. A uniaxial magnetic anisotropy is evidenced, whose orientation with respect to the crystallographic axes changes upon annealing from [-110] for the as-grown samples to [110] for the annealed samples. Both cubic an uniaxial anisotropies are tightly linked to the concentration of charge carriers, the magnitude of which is controlled by the annealing process.

cond-mat.mtrl-sci

Influence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers

The influence of annealing parameters - temperature and time - on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been investigated. The dependence of the transition temperature (Tc) on annealing time marks out two regions. The Tc peak behavior, characteristic of the first region, is more pronounced for thick samples, while for the second (`saturated') region the effect of the annealing time is more pronounced for thin samples. A right choice of the passivation medium, growth conditions along with optimal annealing parameters routinely yield Tc-values of ~ 150 K and above, regardless of the thickness of the epilayers.

cond-mat.mtrl-sci

Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"

The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion of Mn interstitials. We show that the annealing-induced modifications are strongly accelerated if the treatment is carried out under As capping. This means that the modification rate is not limited by the diffusion process, but rather by the surface trapping of the diffusing species.

cond-mat.mtrl-sci

Magnetization of ultrathin (Ga,Mn)As layers

Kerr rotation and Superconducting QUantum Interference Device (SQUID) magnetometry measurements were performed on ultrathin (Ga$_{0.95}$Mn$_{0.05}$)As layers. The thinner layers (below 250 Å) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled-magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 Å) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary Ion Mass Spectrometry (SIMS) experiments on similar layers show that Mn is displaced upon annealing. The results are discussed considering a possible segregation of substitutional and interstitial Mn atoms at the surface of the (Ga,Mn)As layers.

cond-mat.mtrl-sci

Magnetic properties of GaMnAs single layers and GaInMnAs superlattices investigated at low temperature and high magnetic field

Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the Curie temperature (Tc ~ 40 K), a new phase transition is observed close to 13 K.

cond-mat.mtrl-sci

Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As - GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin.

cond-mat.mtrl-sci

Magnetic Properties of Short Period InGaMnAs/InGaAs Superlattices

We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12 Åor 24 Å). The nonmagnetic InGaAs spacer layers are 12 Åthick. The In content of InGaMnAs and InGaAs layers was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick InGaAs nonmagnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.

cond-mat.mtrl-sci

Ferromagnetism and interlayer exchange coupling in short period (Ga,Mn)As/GaAs superlattices

Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of non-magnetic GaAs spacer. The short period Ga$_{0.93}$Mn$_{0.07}$As/GaAs superlattices exhibit a paramagnetic-to-ferromagnetic phase transition close to 60K, for thicknesses of (Ga,Mn)As down to 23 Å. For Ga$_{0.96}$Mn$_{0.04}$As/GaAs superlattices of similar dimensions, the Curie temperature associated with the ferromagnetic transition is found to oscillate with the thickness of non magnetic spacer. The observed oscillations are related to an interlayer exchange interaction mediated by the polarized holes of the (Ga,Mn)As layers.

cond-mat.mtrl-sci

Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties

We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 Å), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 Å). While previous reports state that GaMnAs layers thinner than 50 Åare paramagnetic in the whole Mn composition range achievable using MBE growth (up to 8% Mn), we have found that short period superlattices exhibit a paramagnetic-to-ferromagnetic phase transition with a transition temperature which depends on both the thickness of the magnetic GaMnAs layer and the nonmagnetic GaAs spacer. The neutron scattering experiments have shown that the magnetic layers in superlattices are ferromagnetically coupled for both thin (below 50 Å) and thick (above 50 Å) GaMnAs layers.

cond-mat.mtrl-sci

Critical dynamics of an interacting magnetic nanoparticle system

Effects of dipole-dipole interactions on the magnetic relaxation have been investigated for three Fe-C nanoparticle samples with volume concentrations of 0.06, 5 and 17 vol%. While both the 5 and 17 vol% samples exhibit collective behavior due to dipolar interactions, only the 17 vol% sample displays critical behavior close to its transition temperature. The behaviour of the 5 vol% sample can be attributed to a mixture of collective and single particle dynamics.

cond-mat.mtrl-sci