Strong electron correlation effects in non-volatile electronic memory devices

Marcelo J. Rozenberg; Isao H. Inoue; Maria Jose Sanchez

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Strong electron correlation effects in non-volatile electronic memory devices

Marcelo J. Rozenberg·Isao H. Inoue·Maria Jose Sanchez

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Abstract

We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a novel switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realisation of a novel type of strongly correlated electron device.

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Marcelo J. Rozenberg, Isao H. Inoue, Maria Jose Sanchez. 2004-06-25. Strong electron correlation effects in non-volatile electronic memory devices. https://arxiv.org/abs/cond-mat/0406646

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