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Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey

M. A. Scarpulla·K. M. Yu·W. Walukiewicz·O. D. Dubon
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Abstract

We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is associated with enhanced low-temperature magnetization and an evolution from concave to convex temperature-dependent magnetization.

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M. A. Scarpulla, K. M. Yu, W. Walukiewicz, O. D. Dubon. 2004-08-02. Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey. https://doi.org/10.1063/1.1994621

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