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Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

A. D. Giddings·M. N. Khalid·J. Wunderlich·S. Yasin·R. P. Campion·K. W. Edmonds·J. Sinova·T. Jungwirth·K. Ito·K. Y. Wang·D. Williams·B. L. Gallagher·C. T. Foxon
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Abstract

We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin (Ga,Mn)As epilayer with lateral nanoconstrictions. The observation establishes the generic nature of this effect, which originates from the spin-orbit coupling in a ferromagnet and is not specific to a particular tunnel device design. The lateral geometry allows us to link directly normal anisotropic magnetoresistance (AMR) and TAMR. This indicates that TAMR may be observable in other materials showing a comparable AMR at room temperature, such as transition metal alloys.

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A. D. Giddings, M. N. Khalid, J. Wunderlich, S. Yasin, R. P. Campion, K. W. Edmonds, J. Sinova, T. Jungwirth, K. Ito, K. Y. Wang, D. Williams, B. L. Gallagher, C. T. Foxon. 2004-09-08. Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions. https://doi.org/10.1103/physrevlett.94.127202

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