Instability toward biexciton crystallization in one-dimensional electron-hole systems

Kenichi Asano; Tetsuo Ogawa

doi:10.1016/j.jlumin.2004.09.056

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Instability toward biexciton crystallization in one-dimensional electron-hole systems

Kenichi Asano·Tetsuo Ogawa

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Abstract

One-dimensional (1D) electron-hole (e-h) systems in a high-density regime is investigated by means of bozonization techniques. It turned out that the systems are insulating even at the high density limit and that the exciton Mott transition (insulator-to-metal transition) never occurs at absolute zero temperature. The insulating ground state exhibits a strong instability towards the crystallization of biexcitons.

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Kenichi Asano, Tetsuo Ogawa. 2004-10-08. Instability toward biexciton crystallization in one-dimensional electron-hole systems. https://doi.org/10.1016/j.jlumin.2004.09.056

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