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Spin-dependent resonant tunneling in symmetrical double-barrier structure

M. M. Glazov·P. S. Alekseev·M. A. Odnoblyudov·V. M. Chistyakov·S. A. Tarasenko·I. N. Yassievich
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Abstract

A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field, (ii) generation of an in-plane electric current under tunneling of spin-polarized carriers. These effects originated from spin-orbit coupling-induced splitting of the resonant level have been considered for double-barrier tunneling structures.

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M. M. Glazov, P. S. Alekseev, M. A. Odnoblyudov, V. M. Chistyakov, S. A. Tarasenko, I. N. Yassievich. 2004-10-08. Spin-dependent resonant tunneling in symmetrical double-barrier structure. https://doi.org/10.1103/physrevb.71.155313

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