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Fano resonance in electron transport through parallel double quantum dots in the Kondo regime

Guo-Hui Ding·C. K. Kim·K. Nahm
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Abstract

Electron transport through parallel double quantum dot system with interdot tunneling and strong on-site Coulomb interaction is studied in the Kondo regime by using the finite-$U$ slave boson technique. For a system of quantum dots with degenerate energy levels, the linear conductance reaches the unitary limit ($2e^2/h$) due to the Kondo effect at low temperature when the interdot tunneling is absent. As the interdot tunneling amplitude increases, the conductance decreases in the singly occupied regime and a conductance plateau structure appears. In the crossover to the doubly occupied regime, the conductance increases to reach the maximum value of $G=2e^2/h$. For parallel double dots with different energy levels, we show that the interference effect plays an important role in the electron transport. The linear conductance is shown to have an asymmetric line shape of the Fano resonance as a function of gate voltage.

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Guo-Hui Ding, C. K. Kim, K. Nahm. 2005-02-16. Fano resonance in electron transport through parallel double quantum dots in the Kondo regime. https://doi.org/10.1103/physrevb.71.205313

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