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arXiv · cond-mat/0501281

Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads

Abstract

In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, we have investigated spin transfer effects in complex spin-valve pillars with a diameter of 130nm developed for current-perpendicular to the plane (CPP) magneto-resistive heads. The structure of the samples included an exchange biased synthetic pinned layer and a free layer both laminated by insertion of several ultrathin Cu layers. Despite the small thickness of the polarizing layer, our results show that the free layer can be switched between the parallel (P) and the antiparallel (AP) states by applying current densities of the order of 10^7 A/cm^2. A strong asymmetry is observed between the two critical currents IcAP-P and IcP-AP, as predicted by the model of Slonczewski model. Thanks to the use of exchange biased structures, the stability phase diagrams could be obtained in the four quadrants of the (H, I) plan. The critical lines derived from the magnetoresistance curves measured with different sense currents, and from the resistance versus current curves measured for different applied fields, match each other very well. The main features of the phase diagrams can be reproduced by investigating the stability of the solutions of the Landau Lifshitz Gilbert equation including spin torque term within a macrospin model. A spin-transfer saturation effect was observed in the positive currents range. We attribute it to a de-depolarization effect which appears as a consequence of the asymmetric heating of the pillars, whose top and the bottom leads are made of different materials.

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A. Deac, K. J. Lee, Y. Liu, O. Redon, M. Li, P. Wang, J. P. Nozieres, B. Dieny. 2005-01-12. Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads. https://arxiv.org/abs/cond-mat/0501281

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