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Magnetic-field induced band-structure change in CeBiPt

N. Kozlova·J. Hagel·M. Doerr·J. Wosnitza·D. Eckert·K. -H. Mueller·L. Schultz·I. Opahle·S. Elgazzar·Manuel Richter·G. Goll·G. Zwicknagl·T. Yoshino·T. Takabatake
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Abstract

We report on a field-induced change of the electronic band structure of CeBiPt as evidenced by electrical-transport measurements in pulsed magnetic fields. Above ~25 T, the charge-carrier concentration increases nearly 30% with a concomitant disappearance of the Shubnikov-de Haas signal. These features are intimately related to the Ce 4f electrons since for the non-4f compound LaBiPt the Fermi surface remains unaffected. Electronic band-structure calculations point to a 4f-polarization-induced change of the Fermi-surface topology.

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N. Kozlova, J. Hagel, M. Doerr, J. Wosnitza, D. Eckert, K. -H. Mueller, L. Schultz, I. Opahle, S. Elgazzar, Manuel Richter, G. Goll, G. Zwicknagl, T. Yoshino, T. Takabatake. 2005-02-11. Magnetic-field induced band-structure change in CeBiPt. https://doi.org/10.1103/physrevlett.95.086403

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