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Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel magnetic field

A. V. Goran·A. A. Bykov·A. K. Bakarov·J. C. Portal
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Abstract

We study the transport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in a parallel magnetic field is caused by the spatial modulation of the 2D electron gas.

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A. V. Goran, A. A. Bykov, A. K. Bakarov, J. C. Portal. 2005-02-22. Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel magnetic field. https://doi.org/10.1134/1.1780559

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