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A controllable nanomechanical memory element

Robert L. Badzey·Guiti Zolfagharkhani·Alexei Gaidarzhy·Pritiraj Mohanty
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Abstract

We report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly-clamped suspended nanomechanical beam structure, which can be made to switch controllably between two stable and distinct states at a single frequency in the megahertz range. Because of their sub-micron size and high normal-mode frequencies, these nanomechanical memory elements offer the potential to rival the current state-of-the-art electronic data storage and processing.

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Robert L. Badzey, Guiti Zolfagharkhani, Alexei Gaidarzhy, Pritiraj Mohanty. 2005-03-10. A controllable nanomechanical memory element. https://arxiv.org/abs/cond-mat/0503258

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