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Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si

A. Yu. Kuntsevich·D. A. Knyazev·V. I. Kozub·V. M. Pudalov·G. Brunhaler·G. Bauer
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Abstract

Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be non-monotonic with a maximum at temperatures Tm~0.16Tf. The Rxy(T) variations in the low-temperature domain (T Tm), the Rxy(T) dependence can be qualitatively explained in terms of either a semiclassical T-dependence of a transport time, or a thermal activation of carries from a localized band.

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A. Yu. Kuntsevich, D. A. Knyazev, V. I. Kozub, V. M. Pudalov, G. Brunhaler, G. Bauer. 2005-04-19. Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si. https://doi.org/10.1134/1.1951019

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