arXiv subjects

D. A. Knyazev

Publications and source records attributed to D. A. Knyazev.

11 recordsLinked to original sources

arXiv2019

Superconductivity up to 243 K in yttrium hydrides under high pressure

The discovery of high-temperature conventional superconductivity in H3S with a critical temperature of Tc=203 K was followed by the recent record of Tc ~250 K in the face-centered cubic (fcc) lanthanum hydride LaH10 compound. It was realized in a new class of hydrogen-dominated compounds having a clathrate-like crystal structure in which hydrogen atoms form a 3D framework and surround a host atom of rare earth elements. Yttrium hydrides are predicted to have even higher Tc exceeding room temperature. In this paper, we synthesized and refined the crystal structure of new hydrides: YH4, YH6, and YH9 at pressures up to 237 GPa finding that YH4 crystalizes in the I4/mmm lattice, YH6 in Im-3m lattice and YH9 in P63/mmc lattice in excellent agreement with the calculations. The observed very high-temperature superconductivity is comparable to that found in fcc-LaH10: the pressure dependence of Tc for YH9 also displays a "dome like shape" with the highest Tc of 243 K at 201 GPa. We also observed a Tc of 227 K at 237 GPa for the YH6 phase. However, the measured Tcs are notably lower by ~30 K than predicted. Evidence for superconductivity includes the observation of zero electrical resistance, a decrease of Tc under an external magnetic field and an isotope effect. The theoretically predicted fcc YH10 with the promising highest Tc>300 K was not stabilized in our experiments under pressures up to 237 GPa.

cond-mat.supr-con↗

arXiv2018

Superconductivity at 250 K in lanthanum hydride under high pressures

The discovery of superconductivity at 203 K in H3S brought attention back to conventional superconductors whose properties can be described by the Bardeen-Cooper-Schrieffer (BCS) and the Migdal-Eliashberg theories. These theories predict that high, and even room temperature superconductivity (RTSC) is possible in metals possessing certain favorable parameters such as lattice vibrations at high frequencies. However, these general theories do not suffice to predict real superconductors. New superconducting materials can be predicted now with the aid of first principles calculations based on Density Functional Theory (DFT). In particular, the calculations suggested a new family of hydrides possessing a clathrate structure, where the host atom (Ca, Y, La) is at the center of the cage formed by hydrogen atoms. For LaH10 and YH10 superconductivity, with critical temperatures Tc ranging between 240 and 320 K is predicted at megabar pressures. Here, we report superconductivity with a record Tc ~ 250 K within the Fm-3m structure of LaH10 at a pressure P ~ 170 GPa. We proved the existence of superconductivity at 250 K through the observation of zero-resistance, isotope effect, and the decrease of Tc under an external magnetic field, which suggests an upper critical magnetic field of 120 T at zero-temperature. The pressure dependence of the transition temperatures Tc (P) has a maximum of 250-252 K at the pressure of about 170 GPa. This leap, by ~ 50 K, from the previous Tc record of 203 K indicates the real possibility of achieving RTSC (that is at 273 K) in the near future at high pressures and the perspective of conventional superconductivity at ambient pressure.

cond-mat.supr-con↗

arXiv2018

Superconductivity at 215 K in lanthanum hydride at high pressures

We synthesized lanthanum hydride (LaHx) by laser heating of lanthanum in hydrogen atmosphere at pressure P = 170 GPa. The sample shows a superconducting step at 209 K and 170 GPa and temperature dependence of resistance. By releasing the pressure to 150 GPa, the superconducting transition temperature Tc increases to 215 K - the record Tc. This finding supports a way of achieving Tc higher than the one in H3S (203 K) in hydrides with sodalite-like structures, first proposed for CaH6 (Tc=245 K) and later for yttrium and lanthanum hydrides where higher, room temperature superconductivity is expected.

cond-mat.supr-con↗

arXiv2017

Probing Bulk Superconducting Order Parameter in Ba(K)Fe$_2$As$_2$ by Four Complementary Techniques

Using four different experimental techniques, we performed comprehensive studies of the bulk superconductive properties of single crystals of the nearly optimally doped $Ba_{1-x}K_xFe_2As_2$ ($T_{c} \approx 36\,K$), a typical representative of the 122 family. We investigated temperature dependencies of the (i) specific heat $C_{el}(T)$, (ii) first critical magnetic field $H_{c1}(T)$, (iii) intrinsic multiple Andreev reflection effect (IMARE), and (iv) infrared reflectivity spectra. All data clearly show the presence of (at least) two superconducting nodeless gaps. The quantitative data on the superconducting spectrum obtained by four different techniques are consistent with each other: (a) the small energy gap $Δ_S(0) \approx 1.8 - 2.5\,meV$, and the large gap energy $Δ_L(0) \approx 9.5 - 11.3\,meV$ that demonstrates the signature of an extended s-wave symmetry ($\sim~33 \%$ in-plane anisotropy), (b) the characteristic ratio $2Δ_L/k_BT_C$ noticeably exceeds the BCS value.

cond-mat.supr-con↗

arXiv2010

Detection of mechanical resonance of a single-electron transistor by direct current

We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations of the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail.

cond-mat.mes-hall↗

arXiv2008

Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers

We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields B=0-5T. The experimental data have been analyzed using the theory of interaction effects in the conductivity of disordered 2D systems. The parameters essential for comparison with the theory, such as the intervalley scattering time and valley splitting, have been measured or evaluated in independent experiments. The observed behavior of the conductivity, including its quasi-linear increase with decreasing T down to ~0.4K and its downturn at lower temperatures, is in agreement with the theory. The values of the Fermi- liquid parameter obtained from the comparison agree with the corresponding values extracted from the analysis of Shubnikov-de Haas oscillations based on the theory of magnetooscillations in interacting 2D systems.

cond-mat.dis-nn↗

arXiv2008

Metal-Insulator Transition in 2D: Experimental Test of the Two-Parameter Scaling

We report a detailed scaling analysis of resistivity ρ(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and general scaling ideas. This enables us to determine the critical electron density, two critical indices, and temperature dependence for the separatrix in the self-consistent manner. In addition, we reconstruct the empirical scaling function describing a two-parameter surface which fits well the ρ(T,n) data.

cond-mat.str-el↗

arXiv2006

Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition

We report on studies of the magnetoresistance in strongly correlated 2D electron system in Si in the critical regime, in the close vicinity of the 2D metal-insulator transition. We performed self-consistent comparison of our data with solutions of two equations of the cross-over renormalization group (CRG) theory which describes temperature evolutions of the resistivity and interaction parameters for 2D electron system. We found a good agreement between the ρ(T,B) data and the RG theory in a wide range of the in-plane fields, 0-2.1 T. This agreement supports the interpretation of the observed 2D MIT as the true quantum phase transition.

cond-mat.str-el↗

arXiv2006

Charge Transport in a Spin-Polarized 2D Electron System in Silicon

The temperature dependences of the conductivity σ(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane. Measurements were carried out in a wide temperature range (1.4-9)K, in the ballistic regime of electron-electron interaction, i.e., for Tτ> 1. In zero magnetic field, the data obtained for σ(T) are quantitatively described by the theory of interaction corrections. In the fully spin-polarized state, the measured σ(T) dependences are nonlinear and even nonmonotonic for the same temperature range, where the σ(T) dependences are monotonic in the absence of the field. Nevertheless, the low-temperature parts of the experimental σ(T) dependences are linear and are qualitatively consistent with the calculated interaction corrections.

cond-mat.str-el↗

arXiv2005

Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si

Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be non-monotonic with a maximum at temperatures Tm~0.16Tf. The Rxy(T) variations in the low-temperature domain (T Tm), the Rxy(T) dependence can be qualitatively explained in terms of either a semiclassical T-dependence of a transport time, or a thermal activation of carries from a localized band.

cond-mat.str-el↗

arXiv2004

Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands

With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with low electron mobility 2000 cm^2/Vs in spite of the fact that the spin-splitting is much smaller than the level broadening. Experimental results can be explained in the frame of the scaling theory of the quantum Hall effect, applied independently to each of the two spin subbands.

cond-mat.mes-hall↗