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Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers

V. Stanciu·P. Svedlindh
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Abstract

The dependence of the magnetic anisotropy of As-capped (Ga,Mn)As epilayers on the annealing parameters - temperature and time - has been investigated. A uniaxial magnetic anisotropy is evidenced, whose orientation with respect to the crystallographic axes changes upon annealing from [-110] for the as-grown samples to [110] for the annealed samples. Both cubic an uniaxial anisotropies are tightly linked to the concentration of charge carriers, the magnitude of which is controlled by the annealing process.

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V. Stanciu, P. Svedlindh. 2005-05-11. Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers. https://doi.org/10.1063/1.2123380

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