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Selection and jump rules in electronic Raman scattering from GaAs/Al_{x}Ga_{1-x}As artificial atoms

Alain Delgado·Augusto Gonzalez·D. J. Lockwood·;
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Abstract

A theoretical description of electronic Raman scattering from GaAs/Al_{x}Ga_{1-x}As artificial atoms under the influence of an external magnetic field is presented. Raman spectra with laser excitation energy in the interval E_{gap}-30 meV to E_{gap} are computed in the polarized and depolarized geometry. The polarization ratios for the collective and single-particle excitations indicate a breakdown of the Raman polarization selection rules once the magnetic field is switched on. A Raman intensity jump rule at the band gap is predicted in our calculations. This rule can be a useful tool for identifying the physical nature (charge or spin) of the electronic excitations in quantum dots in low magnetic fields.

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Alain Delgado, Augusto Gonzalez, D. J. Lockwood, ;. 2005-05-27. Selection and jump rules in electronic Raman scattering from GaAs/Al_{x}Ga_{1-x}As artificial atoms. https://doi.org/10.1103/physrevb.71.241311

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