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Direct Observation of Site-specific Valence Electronic Structure at Interface: SiO2/Si Interface

Y. Yamashita·S. Yamamoto·K. Mukai·J. Yoshinobu·Y. Harada·T. Tokushima·2T. Takeuchi·2 Y. Takata·S. Shin·K. Akagi·S. Tsuneyuki
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Abstract

Atom specific valence electronic structures at interface are elucidated successfully using soft x-ray absorption and emission spectroscopy. In order to demonstrate the versatility of this method, we investigated SiO2/Si interface as a prototype and directly observed valence electronic states projected at the particular atoms of the SiO2/Si interface; local electronic structure strongly depends on the chemical states of each atom. In addition we compared the experimental results with first-principle calculations, which quantitatively revealed the interfacial properties in atomic-scale.

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Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, 2T. Takeuchi, 2 Y. Takata, S. Shin, K. Akagi, S. Tsuneyuki. 2005-06-06. Direct Observation of Site-specific Valence Electronic Structure at Interface: SiO2/Si Interface. https://doi.org/10.1103/physrevb.73.045336

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