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Influence of doping level on the Hall coefficient and on the thermoelectric power in $Nd_{2-x}Ce_xCuO_4$

C. H. Wang·G. Y. Wang·T. Wu·Z. Feng·X. G. Luo·X. H. Chen
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Abstract

Hall coefficient $R_H$ and thermoelectric power TEP are studied systematically in the single crystals $Nd_{2-x}Ce_xCuO_{4+δ}$ (NCCO) with different x from underdoped to overdoped regime. With increasing doping level, both $R_H$ and TEP decrease and change their sign from negative to positive. A striking feature is that the temperature dependence of the Hall angle follows a $T^4$ behavior in the underdoped regime, while a $T^2$ in the overdoped regime. These behaviors are closely related to the evolution of Fermi surface with doping level observed by ARPES.

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C. H. Wang, G. Y. Wang, T. Wu, Z. Feng, X. G. Luo, X. H. Chen. 2005-10-20. Influence of doping level on the Hall coefficient and on the thermoelectric power in $Nd_{2-x}Ce_xCuO_4$. https://doi.org/10.1103/physrevb.72.132506

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