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Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system

Mitsuaki Ooya·Kiyohiko Toyama·Tohru Okamoto
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Abstract

We have studied the magnetoresistance in a high-mobility Si inversion layer down to low electron concentrations at which the longitudinal resistivity $ρ_{xx}$ has an activated temperature dependence. The angle of the magnetic field was controlled so as to study the orbital effect proportional to the perpendicular component $B_\perp$ for various total strengths $B_{\rm tot}$. A dip in $ρ_{xx}$, which corresponds to the Landau level filling factor of $ν=4$, survives even for high resistivity of $ρ_{xx} \sim 10^8 Ω$ at $T= 150 {\rm mK}$. The linear $B_{\rm tot}$-dependence of the value of $B_\perp$ at the dip for low $B_{\rm tot}$ indicates that a ferromagnetic instability does not occur even in the far insulating regime.

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Mitsuaki Ooya, Kiyohiko Toyama, Tohru Okamoto. 2005-07-06. Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system. https://doi.org/10.1103/physrevb.72.075344

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