arXiv subjects

Mitsuaki Ooya

Publications and source records attributed to Mitsuaki Ooya.

3 recordsLinked to original sources

arXiv2006

Electrically detected electron spin resonance in a high mobility silicon quantum well

The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the spin polarization, not the effect of electron heating. The longitudinal spin relaxation time T_1 is obtained to be of the order of 1 ms in an in-plane magnetic field of 3.55 T. The suppression of the effect of the Rashba fields due to high-frequency spin precession explains the very long T_1.

cond-mat.mes-hall↗

arXiv2005

Spin polarization and metallic behavior of a silicon two-dimensional electron system

We have studied the magnetic and transport properties of an ultra-low-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of the spin susceptibility is consistent with that in Si-MOS structures. Temperature dependence of resistivity remains metallic even in strong magnetic fields where the spin degree of freedom is frozen out. We also found a magnetoresistance anisotropy with respect to an angle between the current and the in-plane magnetic field.

cond-mat.mes-hall↗

arXiv2005

Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system

We have studied the magnetoresistance in a high-mobility Si inversion layer down to low electron concentrations at which the longitudinal resistivity $ρ_{xx}$ has an activated temperature dependence. The angle of the magnetic field was controlled so as to study the orbital effect proportional to the perpendicular component $B_\perp$ for various total strengths $B_{\rm tot}$. A dip in $ρ_{xx}$, which corresponds to the Landau level filling factor of $ν=4$, survives even for high resistivity of $ρ_{xx} \sim 10^8 Ω$ at $T= 150 {\rm mK}$. The linear $B_{\rm tot}$-dependence of the value of $B_\perp$ at the dip for low $B_{\rm tot}$ indicates that a ferromagnetic instability does not occur even in the far insulating regime.

cond-mat.str-el↗