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Resonant intrinsic spin Hall effect in p-type GaAs quantum well structure

Xi Dai·Zhong Fang·Yu-Gui Yao·Fu-Chun Zhang
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Abstract

We study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level crossing in the lowest heavy hole subband, which gives rise to a resonant spin Hall conductance. The resonance may be used to identify the intrinsic spin Hall effect in experiments.

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Xi Dai, Zhong Fang, Yu-Gui Yao, Fu-Chun Zhang. 2005-07-26. Resonant intrinsic spin Hall effect in p-type GaAs quantum well structure. https://doi.org/10.1103/physrevlett.96.086802

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