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Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon

Darshan C. Kundaliya·S. B. Ogale·S. Dhar·K. F. McDonald·E. Knoesel·T. Osedach·S. E. Lofland·S. R. Shinde·T. Venkatesan
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Abstract

Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (001) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in-situ PLD grown through the step of high temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (100) substrate. The ferromagnetic transition temperature (TC ~ 215 K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ~15 degrees in the ferromagnetic state.

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Darshan C. Kundaliya, S. B. Ogale, S. Dhar, K. F. McDonald, E. Knoesel, T. Osedach, S. E. Lofland, S. R. Shinde, T. Venkatesan. 2005-08-05. Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon. https://doi.org/10.1016/j.jmmm.2005.04.017

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