arXiv · cond-mat/0508417
Conductance switching, hysteresis, and magnetoresistance in organic semiconductors
Abstract
The controllability of charge transport through an organic molecular spin-valve system is theoretically investigated on the basis of a Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. We show how the formation of polaron in the organic sub-structure leads to a hysteretic conductance switching, via sweeping either the bias voltage or the electrochemical potential. We further obtain an exponential dependence of the magnetoresistance as a function of the applied bias voltage. The implications of calculated results in relation to experiments and device applications are addressed and commented.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
J. H. Wei, S. J. Xie, L. M. Mei, YiJing Yan. 2006-08-20. Conductance switching, hysteresis, and magnetoresistance in organic semiconductors. https://arxiv.org/abs/cond-mat/0508417
Cite the original work for its findings. Save a collection to share your selection of sources.