arXiv subjects

L. M. Mei

Publications and source records attributed to L. M. Mei.

5 recordsLinked to original sources

arXiv2014

Anomalous Hall Effect in Variable Range Hopping Regime: Unusual Scaling Law and Sign Reversal with Temperature

Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not variable-range-hopping (VRH), regime. Here we report the experiments of both anomalous and ordinary Hall effect (OHE) in Mott and Efros VRH regimes. We found unusual scaling law of the AHE coefficient $Rah=aRxx^b$ with b>2, contrasting the OHE coefficient $Roh=cRxx^d$ with d<1. More strikingly, the sign of AHE coefficient changes with temperature with specific electron densities.

cond-mat.mes-hall↗

arXiv2014

Thermoelectric properties of Sr0.61Ba0.39Nb2O6-δ ceramics annealed in different oxygen-reduction conditions

The thermoelectric properties of Sr0.61Ba0.39Nb2O6 ceramics, reduced in different conditions, were investigated in the temperature region from 323 K to 1073 K. The electrical transport behaviors of the samples are dominated by the thermal-activated polaron hopping, the Fermi glass behavior, and the Anderson localized behavior from low temperatures to high temperatures, respectively. The lattice thermal conductivity presents a plateau at high temperatures, indicating a glass-like thermal conduction behavior. Both the thermoelectric power factor and the thermal conductivity increase with the increasing degree of oxygen-reduction. Taking these two factors into account, the oxygen-reduction can still contribute to promoting the thermoelectric figure of merit. The highest ZT value (~0.19 at 1073 K) is obtained in the heaviest oxygen reduced sample.

cond-mat.mtrl-sci↗

arXiv2007

Bias-induced insulator-metal transition in organic electronics

We investigate the bias-induced insulator-metal transition in organic electronics devices, on the basis of the Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. The insulator-metal transition is explained with the energy levels crossover that eliminates the Peierls phase and delocalizes the electron states near the threshold voltage. This may account for the experimental observations on the devices that exhibit intrinsic bistable conductance switching with large on-off ratio.

cond-mat.mtrl-sci↗

arXiv2006

Conductance switching, hysteresis, and magnetoresistance in organic semiconductors

The controllability of charge transport through an organic molecular spin-valve system is theoretically investigated on the basis of a Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. We show how the formation of polaron in the organic sub-structure leads to a hysteretic conductance switching, via sweeping either the bias voltage or the electrochemical potential. We further obtain an exponential dependence of the magnetoresistance as a function of the applied bias voltage. The implications of calculated results in relation to experiments and device applications are addressed and commented.

cond-mat.mtrl-sci↗

arXiv2005

Charge-transfer polaron induced negative differential resistance and giant magnetoresistance in organic spintronics: A Su-Schrieffer-Heeger model study

Combining the Su-Schrieffer-Heeger model and the non-equilibrium Green's function formalism, we investigate the negative differential resistance effect in organic spintronics at low temperature and interprete it with a self-doping picture. A giant negative magnetoresistance exceeding 300% is theoretically predicted as the results of the negative differential resistance effects.

cond-mat.mtrl-sci↗