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Quantum control of donor electrons at the Si-SiO2 interface

M. J. Calderon·Belita Koiller·Xuedong Hu·S. Das Sarma
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Abstract

Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and the Si-SiO2 interface by tuning an external electric field. We calculate the shuttling time to range from sub-picoseconds to nanoseconds depending on the distance (~ 10-50 nm) of the donor from the interface. Our results establish that quantum control in such nanostructure architectures could, in principle, be achieved.

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M. J. Calderon, Belita Koiller, Xuedong Hu, S. Das Sarma. 2006-02-15. Quantum control of donor electrons at the Si-SiO2 interface. https://doi.org/10.1103/physrevlett.96.096802

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