SearcharxivSearch

arXiv · cond-mat/0509418

Study of the One- and Two-Band Models for Colossal Magnetoresistive Manganites Using the Truncated Polynomial Expansion Method

Abstract

Considerable progress has been recently made in the theoretical understanding of the colossal magnetoresistance (CMR) effect in manganites. The analysis of simple models with two competing states and a resistor network approximation to calculate conductances has confirmed that CMR effects can be theoretically reproduced using non-uniform clustered states. In this paper, the recently proposed Truncated Polynomial Expansion method (TPEM) for spin-fermion systems is tested using the double-exchange one-band, with finite Hund coupling $J_{\rm H}$, and two-band, with infinite $J_{\rm H}$, models. Two dimensional lattices as large as 48$\times$48 are studied, far larger than those that can be handled with standard exact diagonalization (DIAG) techniques for the fermionic sector. The clean limit (i.e. without quenched disorder) is here analyzed in detail. Phase diagrams are obtained, showing first-order transitions separating ferromagnetic metallic from insulating states. A huge magnetoresistance is found at low temperatures by including small magnetic fields, in excellent agreement with experiments. However, at temperatures above the Curie transition the effect is much smaller confirming that the standard finite-temperature CMR phenomenon cannot be understood using homogeneous states. By comparing results between the two methods, TPEM and DIAG, on small lattices, and by analyzing the systematic behavior with increasing cluster sizes, it is concluded that the TPEM is accurate to handle realistic manganite models on large systems. Our results pave the way to a frontal computational attack of the colossal magnetoresistance phenomenon using double-exchange like models, on large clusters, and including quenched disorder.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

C. Sen, G. Alvarez, Y. Motome, N. Furukawa, I. A. Sergienko, T. Schulthess, A. Moreo, E. Dagotto. 2005-09-19. Study of the One- and Two-Band Models for Colossal Magnetoresistive Manganites Using the Truncated Polynomial Expansion Method. https://doi.org/10.1103/physrevb.73.224430

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci