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Anderson localization in carbon nanotubes: defect density and temperature effects

Blanca Biel·F. J. Garcia-Vidal·Angel Rubio·Fernando Flores
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Abstract

The role of irradiation induced defects and temperature in the conducting properties of single-walled (10,10) carbon nanotubes has been analyzed by means of a first-principles approach. We find that di-vacancies modify strongly the energy dependence of the differential conductance, reducing also the number of contributing channels from two (ideal) to one. A small number of di-vacancies (5-9) brings up strong Anderson localization effects and a seemly universal curve for the resistance as a function of the number of defects. It is also shown that low temperatures, around 15-65 K, are enough to smooth out the fluctuations of the conductance without destroying the exponential dependence of the resistivity as a function of the tube length.

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Blanca Biel, F. J. Garcia-Vidal, Angel Rubio, Fernando Flores. 2005-11-10. Anderson localization in carbon nanotubes: defect density and temperature effects. https://doi.org/10.1103/physrevlett.95.266801

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