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Spin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region

Y. -W. Tan·J. Zhu·H. L. Stormer·L. N. Pfeiffer·K. W. Baldwin·K. W. West
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Abstract

We determine the spin susceptibility $χ$ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, $χ$ decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to $4\times10^{11} cm^{-2}$. In the high density limit, $χ$ tends correctly towards $χ\to 1$ and compare well with recent theory.

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Y. -W. Tan, J. Zhu, H. L. Stormer, L. N. Pfeiffer, K. W. Baldwin, K. W. West. 2005-11-28. Spin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region. https://doi.org/10.1103/physrevb.73.045334

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