Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors

T. Ferrus; R. George; C. H. W. Barnes; M. Pepper

doi:10.1063/1.3499360

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arXiv · cond-mat/0512172

Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors

T. Ferrus·R. George·C. H. W. Barnes·M. Pepper

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Abstract

We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room temperature, it is possible to move them with the application of a suitable electric field. We show that, in this configuration, such a device can be used to control both the disorder and the electron-electron interaction strength at the Si-SiO2 interface.

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T. Ferrus, R. George, C. H. W. Barnes, M. Pepper. 2010-10-11. Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors. https://doi.org/10.1063/1.3499360

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