Measurement of Local Reactive and Resistive Photoresponse of a Superconducting Microwave Device

Alexander P. Zhuravel; Steven M. Anlage; Alexey V. Ustinov

doi:10.1063/1.2205726

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Measurement of Local Reactive and Resistive Photoresponse of a Superconducting Microwave Device

Alexander P. Zhuravel·Steven M. Anlage·Alexey V. Ustinov

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Abstract

We propose and demonstrate a spatial partition method for the high-frequency photo-response of superconducting devices correlated with inductive and resistive changes in microwave impedance. Using a laser scanning microscope, we show that resistive losses are mainly produced by local defects at microstrip edges and by intergrain weak links in the high-temperature superconducting material. These defects initiate nonlinear high-frequency response due to overcritical current densities and entry of vortices.

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Alexander P. Zhuravel, Steven M. Anlage, Alexey V. Ustinov. 2005-12-22. Measurement of Local Reactive and Resistive Photoresponse of a Superconducting Microwave Device. https://doi.org/10.1063/1.2205726

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